? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bt 5551 ( ? MMBT5551) features features features features c npn high voltage transistor maximum maximum maximum maximum rating rating rating rating s s s s ~? characteristic ? symbol ? rating ~? unit collector emitter voltage ?O - lO? v ceo 160 vdc collector base voltage ?O - O? v cbo 180 vdc emitter base voltage lO - O? v ebo 6 .0 vdc collector current continuous ?O - Bm ic 600 madc thermal thermal thermal thermal characteristics characteristics characteristics characteristics characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 h?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ thermal resistance junction to ambient r ja 556 /w total device dissipation ? alumina substrate Xr ,(2)t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature Y??? t j , t stg 150 , - 55to+150 device device device device marking marking marking marking gm gm gm gm bt bt bt bt 5551 5551 5551 5551 ( ? MMBT5551) =g1 =g1 =g1 =g1
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bt 5551 ( ? MMBT5551) electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? max ? unit collector emitter breakdown voltage(3) ?O - lO? (ic=1.0madc,i b =0) v (br)ceo 160 vdc collector base breakdown voltage ?O - O? (ic=100 adc,i e =0) v (br)cbo 180 vdc emitter-base breakdown voltage lO - O? (i e =10 adc,ic=0) v (br)ebo 6 .0 vdc emitter cutoff current lO? (v eb =4.0vdc,i c =0) i ebo 50 nadc collector cutoff current ?O? (v cb =120vdc,i e =0) i cbo 50 nadc dc current gain ? h f e (i c =1.0madc,v ce =5.0vdc) 80 (i c =10madc,v ce =5.0vdc) 80 250 (i c =50madc,v ce =5.0vdc) 30 collector-emitter saturation voltage ?O - lO?? (i c =10madc, i b =1.0madc) (i c =50madc, i b =5.0madc) v ce(sat) 0.15 0.2 vdc base-emitter saturation voltage O - lO?? (i c =10madc, i b =1.0madc) (i c =50madc, i b =5.0madc) v be(sat) 1.0 1.0 vdc current-gain-bandwidth product - ?e (i c =-10madc,v ce =-10vdc,f=100mhz) f t 100 300 mhz output capacitance ? (v cb =-10.0vdc, i e =0, f=1.0mhz) c obo 6.0 pf small-signal current gain ? (v ce =-10vdc, i c =-1.0madc, f=1.0khz) h fe 40 200 noise figure S (v ce =-5.0vdc, i c =-200 adc,r s =1.0k f=1.0khz) nf 8.0 db fr-5=1.0 0.75 0.062in. a lumina=0.4 0.3 0.024in.99.5%alumina. ulse width < 300 u s;duty cycle < 2.0%.
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bt 5551 ( ? MMBT5551) dimension dimension dimension dimension b? (unit) mm
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